numbers cannot be purchased on this site.
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MYOB AccountRight Premier v19 serial numbers, versions
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MYOB AccountRight Premier v19 serial numbers are typically used to create
"AccountRight" support tickets for further assistance.
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This product has a license
period. During this period,
you can use this product only on the number of computers specified in
the license agreement. In addition, the license period will only last as
long as the online license agreement remains active on your behalf. If
the license period is exceeded, or the online license agreement is
expired, you will not be able to use this product.
This product is provided "as is" without warranty of any kind, either
expressed or implied, including, but not limited to, the implied warranties
of merchantability, fitness for a particular purpose and non-infringement.
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There are two parts to this license agreement, the first is the right to access your MYOB account data, that's the license that is being extended, the second part is the database that the license is being used to connect to and this is the license that is currently in use.
If you use the same serial number you would be able to use the AccountRight Premier version because the license is already extended, but it would not be able to use the standard version of AccountRight because it would have a different serial number.
You can use a serial number of AccountRight Standard v19 or AccountRight Premier v19 but not both because they will both be different.
1. Field of the Invention
The present invention relates to a method of manufacturing a semiconductor device including a step of depositing a silicon-on-insulator (SOI) structure in a surface of a semiconductor substrate, and a step of forming a polycrystalline silicon film in the semiconductor substrate.
2. Description of the Related Art
Conventionally, in the manufacture of a semiconductor device including a step of forming a silicon-on-insulator (SOI) structure in a surface of a semiconductor substrate, an SOI structure is formed in a surface of a semiconductor substrate by using a wafer bonding technique. A silicon film having a thickness of about 1 μm is formed on the SOI structure. A metal film or a polycrystalline silicon film having a thickness of about 1 μm is formed on the silicon film. The silicon film and the metal film or the polycrystalline silicon film are etched by using a dry etching method. The SOI structure is thus formed.
In the above technique, when an upper metal film is to be formed on the silicon film by using a sputtering method, a plasma is formed by using a sputtering gas and is used for the sputtering. The metal film is deposited on the silicon film by using the plasma. The deposition rate of the metal film in this case is about 10 μm/hour. As described above, it is difficult to form a metal film having a large thickness at a low cost.
According to the wafer bonding technique, it is difficult to form an SOI structure which includes a large number of SOI layers having a thickness of about 1 μm. As described above, the conventional technique for forming a SOI structure is disadvantageous in forming a large number of SOI layers.
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